Speaker
Kirk Post
(University of California, San Diego, Department of Physics)
Description
K. Post (UCSD), Liang He (UCLA), Xufeng Kou (UCLA), B.C. Chapler (UCSD), Kang L. Wang (UCLA), D.N. Basov (UCSD)
The issue of self doping via selenium vacancies in the topological insulator (TI) Bi$_2$Se$_3$ has hindered efforts to produce samples with surface dominated conductivity. In fact, previous transport measurements of Bi$_2$Se$_3$ samples grown by molecular beam epitaxy (MBE) have demonstrated that the charge carrier density varies as a function of the thickness. To explore this issue in Bi$_2$Se$_3$ we have used various methods of infrared spectroscopy, including transmission and ellipsometry, to probe the electronic structure of Bi$_2$Se$_3$ thin films grown using MBE. From these measurements, we have developed an enhanced understanding of how the sample thickness affects the material properties.
Primary author
Kirk Post
(University of California, San Diego, Department of Physics)
