Low Energy Electrodynamics in Solids 2012

High speed terahertz modulation from metamaterials with embedded high electron mobility transistors

24 Jul 2012, 20:00

2h

Fountain Court (Embassy Suites Napa Valley)

Board: 73

Student Poster Competition Plasmonics / Metamaterials Poster Session 2

Speaker

David Shrekenhamer (Boston College)

Description

David Shrekenhamer, Department of Physics, Boston College, USA Saroj Rout, NanoLab, Electrical and Computer Engineering, Tufts University, USA Andrew Strikwerda, Department of Physics, Boston University, USA Chris Bingham, Department of Physics, Boston College, USA Richard Averitt, Department of Physics, Boston University, USA Sameer Sonkusale, NanoLab, Electrical and Computer Engineering, Tufts University, USA Willie Padilla, Department of Physics, Boston College, USA We have designed and demonstrated the performance of a novel terahertz (THz) device resulting from hybridization of metamaterials (MMs) with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterization is performed using a THz time-domain spectrometer (THz-TDS) and we demonstrate modulation values over 30%, and THz modulation at frequencies up to 10 megahertz (MHz).