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11:30
CHARACTERISATION OF CARBON-VACANCY RELATED DEFECTS IN IRRADIATED NITROGEN DOPED 4H-SIC EPITAXIAL LAYERS AND MATERIAL CHANGES IN IRRADIATED ULTRA-THIN GRAPHENE OXYGENATED LAYERS
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Željko Pastuović
(Centre for Accelerator Science, ANSTO, Australia)
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11:50
CREATION OF SILICON VACANCY IN SILICON CARBIDE USING PROTON BEAM WRITING
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Takeshi Ohshima
(National Institutes for Quantum and Radiological Science and Technology (QST), Japan)
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12:10
DYNAMICS OF RADIATION EFFECTS IN HAMAMATSU S5821 PIN DIODES STUDIED BY IBIC
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J. García López
(University of Sevilla, Spain)
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12:30
DEVELOPMENT OF SINGLE ION IRRADIATION TECHNIQUES AND PROBING THE INDUCED CHANGES IN SIC AND DIAMOND
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Milko Jakšić
(Ruđer Bošković Institute, Croatia Research Laboratory)
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12:50
Lunch