3rd Research Coordination Meeting Ion Beam Induced Spatio-Temporal Structural Evolution of Materials: Accelerators for a New Technology Era, CRP No: F11020

CREATION OF SILICON VACANCY IN SILICON CARBIDE USING PROTON BEAM WRITING

25 Apr 2022, 11:50

20m

71-264 (Lawrence Berkeley National Laboratory)

Session 1: Laboratory Reports

Speaker

Takeshi Ohshima (National Institutes for Quantum and Radiological Science and Technology (QST), Japan)